mmbd4148 / se / cc / ca mmbd4148, rev. c small signal diodes absolute maximum ratings* t a = 25c unless otherwise noted marking mmbd4148 5h mmbd4148ca d6 mmbd4148cc d5 mmbd4148se d4 * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations mmbd4148 / se / cc / ca ? 2001 fairchild semiconductor corporation thermal characteristics electrical characteristics t a = 25c unless otherwise noted symbol parameter value units p d power dissipation 350 mw r ja thermal resistance, junction to ambient 357 c/w symbol parameter value units v rrm maximum repetitive reverse voltage 100 v i f(av) average rectified forward current 200 ma i fsm non-repetitive peak forward surge current pulse width = 1.0 second pulse width = 1.0 microsecond 1.0 2.0 a a t stg storage temperature range -55 to +150 c t j operating junction temperature 150 c 1 2 3 5h 3 1 2 sot-23 connection diagrams 4148 4148se 4148cc 4148ca 11 3 21 2 2 3 3 3 1 symbol parameter test conditions min max units v r breakdown voltage i r = 5.0 a i r = 100 a 75 100 v v v f forward voltage i f = 10 ma 1.0 v i r reverse current v r = 20 v v r = 20 v, t a = 150 c v r = 75 v 25 50 5.0 na a a c t total capacitance v r = 0, f = 1.0 mhz 4.0 pf t rr reverse recovery time i f = 10 ma, v r = 6.0 v, i rr = 1.0 ma, r l = 100 ? 4.0 ns 2nc
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